AlxGa1-xSb window layers for InGaAsSb/GaSb thermophotovoltaic cells
Identifieur interne : 014222 ( Main/Repository ); précédent : 014221; suivant : 014223AlxGa1-xSb window layers for InGaAsSb/GaSb thermophotovoltaic cells
Auteurs : RBID : Pascal:99-0281864Descripteurs français
- Pascal (Inist)
- 8460B, 8460J, 8920, Etude expérimentale, Convertisseur thermophotovoltaïque, Conversion directe énergie, Gallium arséniure, Indium antimoniure, Performance, Paramètre cristallin, Emissivité, Fabrication, Réponse spectrale, Système alliage ternaire, Système alliage quaternaire, Epitaxie phase liquide, Semiconducteur III-V, Passivation, Fenêtre optique, Aluminium composé, Antimoine composé, Evaluation performance.
English descriptors
- KwdEn :
- Aluminium compounds, Antimony compounds, Direct energy conversion, Emissivity, Experimental study, Fabrication, Gallium arsenides, III-V semiconductors, Indium antimonides, LPE, Lattice parameters, Optical windows, Passivation, Performance, Performance evaluation, Quaternary alloy systems, Spectral response, Ternary alloy systems, Thermophotovoltaic converters, thermophotovoltaic cells.
Abstract
We report results of a comparative study of AlSb-based window layers for InGaAsSb/GaSb TPV cells made by liquid-phase epitaxy (LPE). Previous work has shown that an AlGaAsSb window layer significantly improves the performance of InGaAsSb/GaSb TPV cells. As expected, the window layer enhances short-wavelength spectral response and increases the open-circuit voltage by reducing the reverse-saturation current of the diode. We present results for a simpler alternative window layer based on the ternary AlGaSb alloy. We fabricated, characterized, and compared InGaAsAsSb TPV of three types: 1. with an AlGaAsSb window layer, 2. with an AlAsSb window layer, and 3. with no window layer. Both p-on-n (p-type InGaAsSb emitter; n-type InGaAsSb base) and n-on-p (n-type InGaAsSb emitter; p-type InGaAsSb base) homojunction cell configurations were investigated. The InGaAsSb layers have a ∼0.55-ev bandgap and are lattice-matched to a GaSb substrate. As anticipated, both AlGaSb and AlGaAsSb passivated TPV cells were superior to cells without a window layer. The AlGaAsSb/InGaAsSb window/emitter interface is closely lattice matched and would be expected to provide better surface passivation than AlGaSb/InGaAsSb window/emitter interface which has a 0.6% lattice mismatch. On the contrary, our experimental results showed that, based on a comparison of spectral response, AlGaSb window layers were somewhat more effective than AlGaAsSb in passivating the front surface of InGaAsSb diodes. These results demonstrate the viability of a simpler ternary AlGaSb alloy as an alternative to the quaternary AlGaAsSb alloy as a window layer material. © 1999 American Institute of Physics.
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Shellenbarger</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>AstroPower, Inc., Solar Park, Newark, Delaware 19716-2000</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>AstroPower, Inc., Solar Park, Newark</wicri:cityArea></affiliation></author><author><name sortKey="Mauk, Michael G" uniqKey="Mauk M">Michael G. Mauk</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Materials Science and Engineering, University of Delaware, Newark, Delaware 19716-2000</s1><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Materials Science and Engineering, University of Delaware, Newark</wicri:cityArea></affiliation><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>AstroPower, Inc., Solar Park, Newark, Delaware 19716-2000</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>AstroPower, Inc., Solar Park, Newark</wicri:cityArea></affiliation></author><author><name sortKey="Cox, Jeffrey A" uniqKey="Cox J">Jeffrey A. Cox</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>AstroPower, Inc., Solar Park, Newark, Delaware 19716-2000</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>AstroPower, Inc., Solar Park, Newark</wicri:cityArea></affiliation></author><author><name sortKey="Sims, Paul E" uniqKey="Sims P">Paul E. Sims</name><affiliation wicri:level="2"><inist:fA14 i1="02"><s1>AstroPower, Inc., Solar Park, Newark, Delaware 19716-2000</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>AstroPower, Inc., Solar Park, Newark</wicri:cityArea></affiliation></author><author><name sortKey="Mueller, Robert A" uniqKey="Mueller R">Robert A. Mueller</name><affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Jet Propulsion Laboratory, Pasadena, California</s1><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Californie</region></placeName><wicri:cityArea>Jet Propulsion Laboratory, Pasadena</wicri:cityArea></affiliation></author><author><name sortKey="Meakin, John D" uniqKey="Meakin J">John D. Meakin</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Materials Science and Engineering, University of Delaware, Newark, Delaware 19716-2000</s1><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Delaware</region></placeName><wicri:cityArea>Materials Science and Engineering, University of Delaware, Newark</wicri:cityArea></affiliation></author></titleStmt><publicationStmt><idno type="inist">99-0281864</idno><date when="1999-03-10">1999-03-10</date><idno type="stanalyst">PASCAL 99-0281864 AIP</idno><idno type="RBID">Pascal:99-0281864</idno><idno type="wicri:Area/Main/Corpus">014F37</idno><idno type="wicri:Area/Main/Repository">014222</idno></publicationStmt><seriesStmt><idno type="ISSN">0094-243X</idno><title level="j" type="abbreviated">AIP conf. proc.</title><title level="j" type="main">AIP conference proceedings</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Aluminium compounds</term><term>Antimony compounds</term><term>Direct energy conversion</term><term>Emissivity</term><term>Experimental study</term><term>Fabrication</term><term>Gallium arsenides</term><term>III-V semiconductors</term><term>Indium antimonides</term><term>LPE</term><term>Lattice parameters</term><term>Optical windows</term><term>Passivation</term><term>Performance</term><term>Performance evaluation</term><term>Quaternary alloy systems</term><term>Spectral response</term><term>Ternary alloy systems</term><term>Thermophotovoltaic converters</term><term>thermophotovoltaic cells</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>8460B</term><term>8460J</term><term>8920</term><term>Etude expérimentale</term><term>Convertisseur thermophotovoltaïque</term><term>Conversion directe énergie</term><term>Gallium arséniure</term><term>Indium antimoniure</term><term>Performance</term><term>Paramètre cristallin</term><term>Emissivité</term><term>Fabrication</term><term>Réponse spectrale</term><term>Système alliage ternaire</term><term>Système alliage quaternaire</term><term>Epitaxie phase liquide</term><term>Semiconducteur III-V</term><term>Passivation</term><term>Fenêtre optique</term><term>Aluminium composé</term><term>Antimoine composé</term><term>Evaluation performance</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">We report results of a comparative study of AlSb-based window layers for InGaAsSb/GaSb TPV cells made by liquid-phase epitaxy (LPE). Previous work has shown that an AlGaAsSb window layer significantly improves the performance of InGaAsSb/GaSb TPV cells. As expected, the window layer enhances short-wavelength spectral response and increases the open-circuit voltage by reducing the reverse-saturation current of the diode. We present results for a simpler alternative window layer based on the ternary AlGaSb alloy. We fabricated, characterized, and compared InGaAsAsSb TPV of three types: 1. with an AlGaAsSb window layer, 2. with an AlAsSb window layer, and 3. with no window layer. Both p-on-n (p-type InGaAsSb emitter; n-type InGaAsSb base) and n-on-p (n-type InGaAsSb emitter; p-type InGaAsSb base) homojunction cell configurations were investigated. The InGaAsSb layers have a ∼0.55-ev bandgap and are lattice-matched to a GaSb substrate. As anticipated, both AlGaSb and AlGaAsSb passivated TPV cells were superior to cells without a window layer. The AlGaAsSb/InGaAsSb window/emitter interface is closely lattice matched and would be expected to provide better surface passivation than AlGaSb/InGaAsSb window/emitter interface which has a 0.6% lattice mismatch. On the contrary, our experimental results showed that, based on a comparison of spectral response, AlGaSb window layers were somewhat more effective than AlGaAsSb in passivating the front surface of InGaAsSb diodes. These results demonstrate the viability of a simpler ternary AlGaSb alloy as an alternative to the quaternary AlGaAsSb alloy as a window layer material. © 1999 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0094-243X</s0></fA01><fA02 i1="01"><s0>APCPCS</s0></fA02><fA03 i2="1"><s0>AIP conf. proc.</s0></fA03><fA05><s2>460</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Al<sub>x</sub>Ga<sub>1-x</sub>Sb window layers for InGaAsSb/GaSb thermophotovoltaic cells</s1></fA08><fA11 i1="01" i2="1"><s1>SOUTH (Joseph T.)</s1></fA11><fA11 i1="02" i2="1"><s1>SHELLENBARGER (Zane A.)</s1></fA11><fA11 i1="03" i2="1"><s1>MAUK (Michael G.)</s1></fA11><fA11 i1="04" i2="1"><s1>COX (Jeffrey A.)</s1></fA11><fA11 i1="05" i2="1"><s1>SIMS (Paul E.)</s1></fA11><fA11 i1="06" i2="1"><s1>MUELLER (Robert A.)</s1></fA11><fA11 i1="07" i2="1"><s1>MEAKIN (John D.)</s1></fA11><fA14 i1="01"><s1>Materials Science and Engineering, University of Delaware, Newark, Delaware 19716-2000</s1><sZ>1 aut.</sZ><sZ>3 aut.</sZ><sZ>7 aut.</sZ></fA14><fA14 i1="02"><s1>AstroPower, Inc., Solar Park, Newark, Delaware 19716-2000</s1><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ></fA14><fA14 i1="03"><s1>Jet Propulsion Laboratory, Pasadena, California</s1><sZ>6 aut.</sZ></fA14><fA20><s1>545-554</s1></fA20><fA21><s1>1999-03-10</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>21757</s2></fA43><fA44><s0>8100</s0><s1>© 1999 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>99-0281864</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>AIP conference proceedings</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>We report results of a comparative study of AlSb-based window layers for InGaAsSb/GaSb TPV cells made by liquid-phase epitaxy (LPE). Previous work has shown that an AlGaAsSb window layer significantly improves the performance of InGaAsSb/GaSb TPV cells. As expected, the window layer enhances short-wavelength spectral response and increases the open-circuit voltage by reducing the reverse-saturation current of the diode. We present results for a simpler alternative window layer based on the ternary AlGaSb alloy. We fabricated, characterized, and compared InGaAsAsSb TPV of three types: 1. with an AlGaAsSb window layer, 2. with an AlAsSb window layer, and 3. with no window layer. Both p-on-n (p-type InGaAsSb emitter; n-type InGaAsSb base) and n-on-p (n-type InGaAsSb emitter; p-type InGaAsSb base) homojunction cell configurations were investigated. The InGaAsSb layers have a ∼0.55-ev bandgap and are lattice-matched to a GaSb substrate. As anticipated, both AlGaSb and AlGaAsSb passivated TPV cells were superior to cells without a window layer. The AlGaAsSb/InGaAsSb window/emitter interface is closely lattice matched and would be expected to provide better surface passivation than AlGaSb/InGaAsSb window/emitter interface which has a 0.6% lattice mismatch. On the contrary, our experimental results showed that, based on a comparison of spectral response, AlGaSb window layers were somewhat more effective than AlGaAsSb in passivating the front surface of InGaAsSb diodes. These results demonstrate the viability of a simpler ternary AlGaSb alloy as an alternative to the quaternary AlGaAsSb alloy as a window layer material. © 1999 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="X"><s0>001D05I03G</s0></fC02><fC02 i1="02" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="03" i2="X"><s0>001D17</s0></fC02><fC02 i1="04" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>8460B</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>8460J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>8920</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Convertisseur thermophotovoltaïque</s0></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Thermophotovoltaic converters</s0></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Conversion directe énergie</s0></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Direct energy conversion</s0></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Gallium arséniure</s0><s2>NK</s2></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Gallium arsenides</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium antimoniure</s0><s2>NK</s2></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium antimonides</s0><s2>NK</s2></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Performance</s0></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Performance</s0></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Paramètre cristallin</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Lattice parameters</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Emissivité</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Emissivity</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Fabrication</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Fabrication</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Réponse spectrale</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Spectral response</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Système alliage ternaire</s0></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Ternary alloy systems</s0></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Système alliage quaternaire</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Quaternary alloy systems</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>thermophotovoltaic cells</s0><s4>INC</s4></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Epitaxie phase liquide</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>LPE</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Passivation</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Passivation</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Fenêtre optique</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Optical windows</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Aluminium composé</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Aluminium compounds</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Antimoine composé</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Antimony compounds</s0></fC03><fC03 i1="23" i2="3" l="FRE"><s0>Evaluation performance</s0></fC03><fC03 i1="23" i2="3" l="ENG"><s0>Performance evaluation</s0></fC03><fN21><s1>172</s1></fN21><fN47 i1="01" i2="1"><s0>9923M000090</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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